| ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS |
Prev
Next
|
|
|
Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures |
| Chen Liang(陈亮)a)b)†, Qian Yun-Sheng(钱芸生)b), Zhang Yi-Jun(张益军)b), and Chang Ben-Kang(常本康)b) |
a. Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China;
b. Institute of Electronic Engineering & Optoelectronics Technology, Nanjing University of Science and Technology, Nanjing 210094, China |
|
|
|
|
Abstract Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.
|
Received: 13 January 2011
Revised: 23 August 2011
Accepted manuscript online:
|
|
PACS:
|
42.70.Gi
|
(Light-sensitive materials)
|
| |
71.55.Eq
|
(III-V semiconductors)
|
| |
72.10.-d
|
(Theory of electronic transport; scattering mechanisms)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60678043 and 60801036). |
Corresponding Authors:
Chen Liang,sunembed@yahoo.com.cn
E-mail: sunembed@yahoo.com.cn
|
Cite this article:
Chen Liang(陈亮), Qian Yun-Sheng(钱芸生), Zhang Yi-Jun(张益军), and Chang Ben-Kang(常本康) Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures 2012 Chin. Phys. B 21 034214
|
| [1] Zou J J, Chang B K and Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese)[2] Yang Z, Chang B K, Zou J J, Qiao J L, Gao P, Zeng Y P and Li H 2007 Appl. Opt. 4 67035[3] Kudman I and Seidel T 1962 J. Appl. Phys. 33 771[4] Zeng Y P, Cao X, Cui L J, Kong M Y, Pan L, Wang B Q and Zhu Z P 2001 J. Cryst. Growth. 210 227[5] Pollehn H K 1995 Adv. Electron. El. phys. 64A 63[6] Niu J, Zhang Y J, Chang B K, Yang Z and Xiong Y J 2009 Appl. Opt. 48 5445[7] Zhang Y J, Chang B K, Yang Z, Niu J and Zou J J 2009 Chin. Phys. B 18 4541[8] Zhang Y J, Niu J, Zou J J, Chang B K and Xiong Y J 2010 Appl. Opt. 49 3935[9] Mulhollan G A, Subashiev A V, Clendenin J E, Garwin E L, Kirby R E, Maruyama T and Prepost R 2001 Phys. Lett. A 282 309[10] Zou J J, Chang B K, Chen H L and Liu L 2007 J. Appl. Phys. 101 033121[11] Niu J, Zhang Y J Chang B K and Xiong Y J 2011 Chin. Phys. B 20 044209[12] Olafsson H O Gudmundsson J T Svavarsson H G and Gislason H P 1999 Physica B 273 689[13] Zhang Y J, Niu J, Zhao J, Zou J J, Chang B K, Shi F and Cheng H C 2010 J. Appl. Phys. 108 093108[14] Foussekis M, Ferguson J D, Baski A A, Morko H and Reshchikov M A 2009 Physica B 23 4892[15] Antypas G A, James L W and Uebbing J J 1970 J. Appl. Phys. 41 2888[16] Liu Y Z, Moll J L and Spicer W E 1970 Appl. Phys. Lett. 17 60[17] Kronik L and Shapira Y 2001 Surf. Interface. Anal. 31 954[18] Daniela C, Saurabh P, Beatrice F and Anna C 2011 Appl. Phys. Lett. 98 142111[19] Drouhin H J, Hermann C and Lampel G 1985 Phys. Rev. B 31 3859[20] Pastuszka S, Kratzmann D, Schwalm D, Wolf A and Terekhov A S 1997 Appl. Phys. Lett. 71 2967[21] Liu Z, Sun Y, Peterson S and Pianetta P 2008 Appl. Phys. Lett. 92 241107[22] Farsakoglu O F, Zengin D M and Koalas H 1993 Opt. Eng. 32 1105[23] Reshchikov M A, Foussekis M and Baski A A 2010 J. Appl. Phys. 107 113535[24] Tereshchenko O E, Voronin V S, Scheibler H E, Alperovich V L and Terekhov A S 2002 Surf. Sci. 51 507[25] Tomkiewicz P, Arabasz S, Adamowicz B, Miczek M, Mizsei J, Zahn D T, Hasegawa H and Szuber J 2009 Surf. Sci. 603 498 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
