Chinese Physics B
Back-side stress to ease p-MOSFET degradation on e-MRAM chips
Zhi-Meng Yu(于志猛), Xiao-Lei Yang(杨晓蕾), Xiao-Nan Zhao(赵晓楠), Yan-Jie Li(李艳杰), Shi-Kun He(何世坤), and Ye-Wu Wang(王业伍)
Chin. Phys. B . 2024, (12): 128503 -128503 .  DOI: 10.1088/1674-1056/ad7c2d

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