Chinese Physics B
Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes
Maojiu Luo(罗茂久), Yourun Zhang(张有润), Yucheng Wang(王煜丞), Hang Chen(陈航), Rong Zhou(周嵘), Zhi Wang(王智), Chao Lu(陆超), and Bo Zhang(张波)
Chin. Phys. B . 2024, (10): 108401 -108401 .  DOI: 10.1088/1674-1056/ad6255

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