Chinese Physics B
One memristor-one electrolyte-gated transistor-based high energy-efficient dropout neuronal units
Yalin Li(李亚霖), Kailu Shi(时凯璐), Yixin Zhu(朱一新), Xiao Fang(方晓), Hangyuan Cui(崔航源), Qing Wan(万青), and Changjin Wan(万昌锦)
Chin. Phys. B . 2024, (6): 68401 -068401 .  DOI: 10.1088/1674-1056/ad39d6

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