Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation
Ruijun Zhang(张锐军), Rongdun Hong(洪荣墩), Jingrui Han(韩景瑞), Hungkit Ting(丁雄杰), Xiguang Li(李锡光), Jiafa Cai(蔡加法), Xiaping Chen(陈厦平), Deyi Fu(傅德颐), Dingqu Lin(林鼎渠), Mingkun Zhang(张明昆), Shaoxiong Wu(吴少雄),Yuning Zhang(张宇宁), Zhengyun Wu(吴正云), and Feng Zhang(张峰)
Chin. Phys. B
.
2023, (6): 67205
-067205
.
DOI: 10.1088/1674-1056/ac89db
