A polarization mismatched p-GaN/p-Al <sub>0.25</sub>Ga <sub>0.75</sub>N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa

Yidan Zhang(张一丹), Chunshuang Chu(楚春双), Sheng Hang(杭升), Yonghui Zhang(张勇辉),Quan Zheng(郑权), Qing Li(李青), Wengang Bi(毕文刚), and Zihui Zhang(张紫辉)

Chin. Phys. B . 2023, (1): 18509 -018509 . DOI: 10.1088/1674-1056/ac9b35