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Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚)
Chin. Phys. B . 2022, (
8
): 86106 -086106 . DOI: 10.1088/1674-1056/ac5d32