Charge trapping memory device based on the Ga <sub>2</sub>O <sub>3</sub> films as trapping and blocking layer

Charge trapping memory device based on the Ga ₂O ₃ films as trapping and blocking layer

Bing Bai(白冰), Hong Wang(王宏), Yan Li(李岩), Yunxia Hao(郝云霞), Bo Zhang(张博), Boping Wang(王博平), Zihang Wang(王子航), Hongqi Yang(杨红旗), Qihang Gao(高启航), Chao Lü(吕超), Qingshun Zhang(张庆顺), Xiaobing Yan(闫小兵)

Chin. Phys. B . 2019, (10): 106802 -106802 . DOI: 10.1088/1674-1056/ab3e62