Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers
Li-Wen Cheng(程立文), Jian Ma(马剑), Chang-Rui Cao(曹常锐), Zuo-Zheng Xu(徐作政), Tian Lan(兰天), Jin-Peng Yang(杨金彭), Hai-Tao Chen(陈海涛), Hong-Yan Yu(于洪岩), Shu-Dong Wu(吴曙东), Shun Yao(尧舜), Xiang-Hua Zeng(曾祥华), Zai-Quan Xu(徐仔全)
Chin. Phys. B
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2018, (8): 88504
-088504
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DOI: 10.1088/1674-1056/27/8/088504
