Other articles related with "tunneling field effect transistor":
68501 Bin Lu(芦宾), Xin Ma(马鑫), Dawei Wang(王大为), Guoqiang Chai(柴国强),Linpeng Dong(董林鹏), and Yuanhao Miao(苗渊浩)
  A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors
    Chin. Phys. B   2023 Vol.32 (6): 68501-068501 [Abstract] (239) [HTML 0 KB] [PDF 808 KB] (156)
18505 Ru Han(韩茹), Hai-Chao Zhang(张海潮), Dang-Hui Wang(王党辉), Cui Li(李翠)
  Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
    Chin. Phys. B   2019 Vol.28 (1): 18505-018505 [Abstract] (915) [HTML 1 KB] [PDF 792 KB] (175)
97401 Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌)
  Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures
    Chin. Phys. B   2017 Vol.26 (9): 97401-097401 [Abstract] (617) [HTML 1 KB] [PDF 1008 KB] (258)
97102 Liu Ying (刘颖), He Jin (何进), Chan Mansun (陈文新), Du Cai-Xia (杜彩霞), Ye Yun (叶韵), Zhao Wei (赵巍), Wu Wen (吴文), Deng Wan-Ling (邓婉玲), Wang Wen-Ping (王文平)
  An analytic model for gate-all-around silicon nanowire tunneling field effect transistors
    Chin. Phys. B   2014 Vol.23 (9): 97102-097102 [Abstract] (778) [HTML 1 KB] [PDF 405 KB] (8210)
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