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Other articles related with "total ionizing dose effect"：
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87501 |
Yan Cui(崔岩), Ling Yang(杨玲), Teng Gao(高腾), Bo Li(李博), Jia-Jun Luo(罗家俊) |
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Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices |
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Chin. Phys. B
2017 Vol.26 (8): 87501-087501
[Abstract]
(635)
[HTML 1 KB]
[PDF 1555 KB]
(241)
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114220 |
Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), He Yi-Bai(何益百), Chi Ya-Qing(池雅庆), and Deng Ke-Feng(邓科峰) |
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Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs |
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Chin. Phys. B
2011 Vol.20 (11): 114220-114220
[Abstract]
(1330)
[HTML 0 KB]
[PDF 3380 KB]
(753)
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2773 |
He Chao-Hui(贺朝会) and Li Yong-Hong(李永宏) |
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Experimental study on radiation effects in floating gate read-only-memories and static random access memories |
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Chin. Phys. B
2007 Vol.16 (9): 2773-2778
[Abstract]
(1444)
[HTML 1 KB]
[PDF 686 KB]
(564)
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