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Other articles related with "the gate leakage current"：
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97309 |
Sheng Zhang(张昇), Ke Wei(魏珂), Yang Xiao(肖洋), Xiao-Hua Ma(马晓华), Yi-Chuan Zhang(张一川), Guo-Guo Liu(刘果果), Tian-Min Lei(雷天民), Ying-Kui Zheng(郑英奎), Sen Huang(黄森), Ning Wang(汪宁), Muhammad Asif, Xin-Yu Liu(刘新宇) |
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Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs |
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Chin. Phys. B
2018 Vol.27 (9): 97309-097309
[Abstract]
(790)
[HTML 1 KB]
[PDF 892 KB]
(211)
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