Other articles related with "short channel effect":
117102 Hai-Qing Xie(谢海情), Dan Wu(伍丹), Xiao-Qing Deng(邓小清), Zhi-Qiang Fan(范志强), Wu-Xing Zhou(周五星), Chang-Qing Xiang(向长青), and Yue-Yang Liu(刘岳阳)
  Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application
    Chin. Phys. B   2021 Vol.30 (11): 117102-117102 [Abstract] (458) [HTML 1 KB] [PDF 3845 KB] (160)
108503 Shweta Tripathi
  A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET
    Chin. Phys. B   2016 Vol.25 (10): 108503-108503 [Abstract] (613) [HTML 1 KB] [PDF 5433 KB] (683)
76105 S. Theodore Chandra, N. B. Balamurugan, G. Lakshmi Priya, S. Manikandan
  Subthreshold behavior of AlInSb/InSb high electron mobility transistors
    Chin. Phys. B   2015 Vol.24 (7): 76105-076105 [Abstract] (559) [HTML 1 KB] [PDF 244 KB] (508)
118505 Shweta Tripathi
  A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET
    Chin. Phys. B   2014 Vol.23 (11): 118505-118505 [Abstract] (645) [HTML 1 KB] [PDF 332 KB] (437)
57304 Ma Fei(马飞), Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌)
  A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures
    Chin. Phys. B   2012 Vol.21 (5): 57304-057304 [Abstract] (1638) [HTML 1 KB] [PDF 180 KB] (2174)
107302 Li Jin(李劲), Liu Hong-Xia(刘红侠), Li Bin(李斌), Cao Lei(曹磊), and Yuan Bo(袁博)
  Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs
    Chin. Phys. B   2010 Vol.19 (10): 107302-107302 [Abstract] (1443) [HTML 1 KB] [PDF 754 KB] (1044)
107301 Li Jin(李劲),Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博)
  The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs
    Chin. Phys. B   2010 Vol.19 (10): 107301-107301 [Abstract] (1421) [HTML 1 KB] [PDF 873 KB] (711)
1815 Tong Jian-Nong (童建农), Zou Xue-Cheng (邹雪城), Shen Xu-Bang (沈绪榜)
  Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET
    Chin. Phys. B   2004 Vol.13 (11): 1815-1819 [Abstract] (1165) [HTML 1 KB] [PDF 212 KB] (416)
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