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Other articles related with "recessed gate"：
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97308 |
Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Characteristics and threshold voltage model of GaN-based FinFET with recessed gate |
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Chin. Phys. B
2018 Vol.27 (9): 97308-097308
[Abstract]
(852)
[HTML 1 KB]
[PDF 804 KB]
(249)
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38501 |
Wang Li-Dan (汪丽丹), Ding Peng (丁芃), Su Yong-Bo (苏永波), Chen Jiao (陈娇), Zhang Bi-Chan (张毕禅), Jin Zhi (金智) |
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100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT=249 GHz and fmax=415 GHz |
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Chin. Phys. B
2014 Vol.23 (3): 38501-038501
[Abstract]
(697)
[HTML 1 KB]
[PDF 1135 KB]
(944)
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