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Other articles related with "partiallydepleted silicon-on-insulator (PD SOI)"：
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28501 |
Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选) |
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Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation |
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Chin. Phys. B
2018 Vol.27 (2): 28501-028501
[Abstract]
(790)
[HTML 0 KB]
[PDF 469 KB]
(364)
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