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Other articles related with "negative differential resistance effect"：
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97401 |
Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌) |
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Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures |
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Chin. Phys. B
2017 Vol.26 (9): 97401-097401
[Abstract]
(627)
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[PDF 1008 KB]
(258)
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