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Other articles related with "memory device"：
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76101 |
Jie Luo(罗捷), Tie-shan Wang(王铁山), Dong-qing Li(李东青), Tian-qi Liu(刘天奇), Ming-dong Hou(侯明东), You-mei Sun(孙友梅), Jing-lai Duan(段敬来), Hui-jun Yao(姚会军), Kai Xi(习凯), Bing Ye(叶兵), Jie Liu(刘杰) |
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Investigation of flux dependent sensitivity on single event effect in memory devices |
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Chin. Phys. B
2018 Vol.27 (7): 76101-076101
[Abstract]
(657)
[HTML 1 KB]
[PDF 1369 KB]
(219)
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37101 |
Wang Zhi-Qiang (王志强), Yan Zhi-Bo (颜志波), Qin Ming-Hui (秦明辉), Gao Xing-Sen (高兴森), Liu Jun-Ming (刘俊明) |
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Dynamic resistive switching in a three-terminal device based on phase separated manganites |
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Chin. Phys. B
2015 Vol.24 (3): 37101-037101
[Abstract]
(714)
[HTML 0 KB]
[PDF 448 KB]
(389)
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97701 |
Tang Zhen-Jie (汤振杰), Li Rong (李荣), Yin Jiang (殷江) |
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Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer |
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Chin. Phys. B
2013 Vol.22 (9): 97701-097701
[Abstract]
(815)
[HTML 1 KB]
[PDF 379 KB]
(618)
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