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Other articles related with "magnetoresistive random-access memories"：
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87501 |
Yan Cui(崔岩), Ling Yang(杨玲), Teng Gao(高腾), Bo Li(李博), Jia-Jun Luo(罗家俊) |
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Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices |
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Chin. Phys. B
2017 Vol.26 (8): 87501-087501
[Abstract]
(635)
[HTML 1 KB]
[PDF 1555 KB]
(241)
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