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Other articles related with "low temperature ohmic process":
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38503 |
Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平) |
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Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature |
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Chin. Phys. B
2016 Vol.25 (3): 38503-038503
[Abstract]
(854)
[HTML 0 KB]
[PDF 371 KB]
(380)
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