Other articles related with "low temperature ohmic process":
38503 Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平)
  Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature
    Chin. Phys. B   2016 Vol.25 (3): 38503-038503 [Abstract] (854) [HTML 0 KB] [PDF 371 KB] (380)
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