Other articles related with "lattice temperature":
18501 Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Yi-Tian Liu(柳奕天), Zhao-Qiao Gu(顾朝桥), An-An Ju(琚安安), and Xiao-Ping Ouyang(欧阳晓平)
  Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET
    Chin. Phys. B   2022 Vol.31 (1): 18501-018501 [Abstract] (606) [HTML 0 KB] [PDF 2029 KB] (180)
47802 Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益)
  Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
    Chin. Phys. B   2020 Vol.29 (4): 47802-047802 [Abstract] (642) [HTML 1 KB] [PDF 901 KB] (148)
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