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Other articles related with "ionizing radiation effect"：
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96102 |
Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉) |
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Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory |
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Chin. Phys. B
2017 Vol.26 (9): 96102-096102
[Abstract]
(720)
[HTML 0 KB]
[PDF 551 KB]
(267)
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948 |
Zhang Guo-Qiang (张国强), Guo Qi (郭旗), Erkin (艾尔肯), Lu Wu (陆妩), Ren Di-Yuan (任迪远) |
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A novel technique for predicting ionizing radiation effects of commercial MOS devices |
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Chin. Phys. B
2004 Vol.13 (6): 948-953
[Abstract]
(1146)
[HTML 0 KB]
[PDF 182 KB]
(464)
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