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Other articles related with "fin field-effect transistor"：
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126103 |
Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌) |
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Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs |
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Chin. Phys. B
2022 Vol.31 (12): 126103-126103
[Abstract]
(368)
[HTML 0 KB]
[PDF 2300 KB]
(68)
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77303 |
Fang-Lin Zheng(郑芳林), Cheng-Sheng Liu(刘程晟), Jia-Qi Ren(任佳琪), Yan-Ling Shi(石艳玲), Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进) |
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Analytical capacitance model for 14 nm FinFET considering dual-k spacer |
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Chin. Phys. B
2017 Vol.26 (7): 77303-077303
[Abstract]
(631)
[HTML 1 KB]
[PDF 1849 KB]
(605)
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89401 |
Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明), Li Da-Wei (李达维), Liang Bin (梁斌), Liu Bi-Wei (刘必慰 ) |
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Temperature and drain bias dependence of single event transient in 25-nm FinFET technology |
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Chin. Phys. B
2012 Vol.21 (8): 89401-089401
[Abstract]
(1460)
[HTML 1 KB]
[PDF 727 KB]
(1368)
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