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Other articles related with "defects properties"：
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78501 |
Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超) |
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Effect of defects properties on InP-based high electron mobility transistors |
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Chin. Phys. B
2019 Vol.28 (7): 78501-078501
[Abstract]
(693)
[HTML 1 KB]
[PDF 1176 KB]
(200)
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