Other articles related with "compact model":
36804 Nianduan Lu(卢年端), Lingfei Wang(汪令飞), Ling Li(李泠), Ming Liu(刘明)
  A review for compact model of graphene field-effect transistors
    Chin. Phys. B   2017 Vol.26 (3): 36804-036804 [Abstract] (713) [HTML 1 KB] [PDF 10934 KB] (1347)
47303 Zhang Jian(张健), He Jin(何进), Zhou Xing-Ye(周幸叶), Zhang Li-Ning(张立宁), Ma Yu-Tao(马玉涛), Chen Qin(陈沁), Zhang Xu-Kai(张勖凯), Yang Zhang(杨张), Wang Rui-Fei(王睿斐), HanYu(韩雨), and Chan Mansun(陈文新)
  A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel
    Chin. Phys. B   2012 Vol.21 (4): 47303-047303 [Abstract] (1395) [HTML 1 KB] [PDF 303 KB] (725)
97304 Zhou Xing-Ye(周幸叶), Zhang Jian(张健), Zhou Zhi-Ze(周致赜), Zhang Li-Ning(张立宁), Ma Chen-Yue(马晨月), Wu Wen(吴文), Zhao Wei(赵巍), and Zhang Xing(张兴)
  An improvement to computational efficiency of the drain current model for double-gate MOSFET
    Chin. Phys. B   2011 Vol.20 (9): 97304-097304 [Abstract] (1538) [HTML 1 KB] [PDF 371 KB] (940)
4312 Li Zun-Chao (李尊朝)
  Performance and analytical modelling of halo-doped surrounding gate MOSFETs
    Chin. Phys. B   2008 Vol.17 (11): 4312-4317 [Abstract] (1436) [HTML 1 KB] [PDF 1287 KB] (662)
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