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Other articles related with "InGaN/GaN quantum well"：
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107803 |
Liang Qiao(乔良), Zi-Guang Ma(马紫光), Hong Chen(陈弘), Hai-Yan Wu(吴海燕), Xue-Fang Chen(陈雪芳), Hao-Jun Yang(杨浩军), Bin Zhao(赵斌), Miao He(何苗), Shu-Wen Zheng(郑树文), Shu-Ti Li(李述体) |
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Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes |
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Chin. Phys. B
2016 Vol.25 (10): 107803-107803
[Abstract]
(743)
[HTML 1 KB]
[PDF 931 KB]
(317)
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97304 |
Hassen Dakhlaoui |
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Intersubband transitions in InxAl(1-x)N/InyGa(1-y)Nquantum well operating at 1.55 μm |
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Chin. Phys. B
2014 Vol.23 (9): 97304-097304
[Abstract]
(474)
[HTML 1 KB]
[PDF 259 KB]
(455)
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76803 |
Cao Wen-Yu (曹文彧), He Yong-Fa (贺永发), Chen Zhao (陈钊), Yang Wei (杨薇), Du Wei-Min (杜为民), Hu Xiao-Dong (胡晓东) |
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Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure |
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Chin. Phys. B
2013 Vol.22 (7): 76803-076803
[Abstract]
(849)
[HTML 1 KB]
[PDF 286 KB]
(911)
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26102 |
Yan Qi-Rong (严启荣), Yan Qi-Ang (闫其昂), Shi Pei-Pei (石培培), Niu Qiao-Li (牛巧利), Li Shu-Ti (李述体), Zhang Yong (章勇) |
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Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells |
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Chin. Phys. B
2013 Vol.22 (2): 26102-026102
[Abstract]
(902)
[HTML 1 KB]
[PDF 372 KB]
(781)
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