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Other articles related with "InAs/AlSb HEMT"：
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97201 |
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Zhichuan Niu(牛智川), Yuming Zhang(张玉明) |
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Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors |
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Chin. Phys. B
2018 Vol.27 (9): 97201-097201
[Abstract]
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[PDF 849 KB]
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