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Other articles related with "HKP-VDMOS"：
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48502 |
Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo |
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Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator |
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Chin. Phys. B
2018 Vol.27 (4): 48502-048502
[Abstract]
(726)
[HTML 1 KB]
[PDF 1087 KB]
(211)
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