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Other articles related with "GaN high electron mobility transistor (HEMT)"：
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48104 |
Minglong Zhao(赵明龙), Xiansheng Tang(唐先胜), Wenxue Huo(霍雯雪), Lili Han(韩丽丽), Zhen Deng(邓震), Yang Jiang(江洋), Wenxin Wang(王文新), Hong Chen(陈弘), Chunhua Du(杜春花), Haiqiang Jia(贾海强) |
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Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate |
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Chin. Phys. B
2020 Vol.29 (4): 48104-048104
[Abstract]
(638)
[HTML 1 KB]
[PDF 2637 KB]
(173)
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