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Other articles related with "GIDL":
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47401 |
Bin Wang(王斌), Xin-Long Shi(史鑫龙), Yun-Feng Zhang(张云峰), Yi Chen(陈伊), Hui-Yong Hu(胡辉勇), and Li-Ming Wang(王利明) |
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Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect |
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Chin. Phys. B
2021 Vol.30 (4): 47401-
[Abstract]
(532)
[HTML 1 KB]
[PDF 713 KB]
(179)
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67402 |
Bin Wang(王斌), He-Ming Zhang(张鹤鸣), Hui-Yong Hu(胡辉勇), Xiao-Wei Shi(史小卫) |
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Enhancement of off-state characteristics in junctionless field effect transistor using a field plate |
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Chin. Phys. B
2018 Vol.27 (6): 67402-067402
[Abstract]
(743)
[HTML 0 KB]
[PDF 628 KB]
(209)
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645 |
Chen Hai-Feng (陈海峰), Hao Yue (郝跃), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进城), Li Kang (李康), Cao Yan-Rong (曹艳荣), Zhang Jin-Feng (张金凤), Zhou Peng-Ju (周鹏举) |
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Investigation of the characteristics of GIDL current in 90nm CMOS technology |
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Chin. Phys. B
2006 Vol.15 (3): 645-648
[Abstract]
(1840)
[HTML 0 KB]
[PDF 304 KB]
(1882)
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