Other articles related with "3D-IC":
26101 Bing Ye(叶兵), Li-Hua Mo(莫莉华), Tao Liu(刘涛), Jie Luo(罗捷), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), Chang Cai(蔡畅), Ze He(贺泽), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东), Jie Liu(刘杰)
  Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device
    Chin. Phys. B   2020 Vol.29 (2): 26101-026101 [Abstract] (674) [HTML 1 KB] [PDF 2745 KB] (174)
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