| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Lewis acid-base additive on lead-free Cs2SnI6 thin film prepared by direct solution coating process |
| Saqib Nawaz Khan1,2,3, Yan Wang(王燕)4, Lixiang Zhong(钟李祥)5, Huili Liang(梁会力)1,2, Xiaolong Du(杜小龙)1,2,3, and Zengxia Mei(梅增霞)1,2,† |
1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Songshan Lake Materials Laboratory, Dongguan 523808, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China;
4 Beijing Hairou Laboratory, Beijing 101400, China;
5 School of Physics, Beijing Institute of Technology, Beijing 100081, China |
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Abstract Inorganic Cs$_{2}$SnI$_{6}$ perovskite has exhibited substantial potential for light harvesting due to its exceptional optoelectronic properties and remarkable stability in ambient conditions. The charge transport characteristics within perovskite films are subject to modulation by various factors, including crystalline orientation, morphology, and crystalline quality. Achieving preferred crystalline orientation and film morphology via a solution-based process is challenging for Cs$_{2}$SnI$_{6}$ films. In this work, we employed thiourea as an additive to optimize crystal orientation, enhance film morphology, promote crystallization, and achieve phase purity. Thiourea lowers the surface energy of the (222) plane along the $\langle 111\rangle$ direction, confirmed by x-ray diffraction, x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy studies, and density functional theory calculations. Varying thiourea concentration enables a bandgap tuning of Cs$_{2}$SnI$_{6}$ from 1.52 eV to 1.07 eV. This approach provides a novel method for utilizing Cs$_{2}$SnI$_{6}$ films in high-performance optoelectronic devices.
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Received: 01 March 2024
Revised: 30 April 2024
Accepted manuscript online: 13 May 2024
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PACS:
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72.80.Jc
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(Other crystalline inorganic semiconductors)
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87.15.nt
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(Crystallization)
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91.60.Ed
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(Crystal structure and defects, microstructure)
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68.55.-a
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(Thin film structure and morphology)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12174275, 62174113, 61874139, 61904201, and 11875088) and Guangdong Basic and Applied Basic Research Foundation (Grant No. 2019B1515120057). |
Corresponding Authors:
Zengxia Mei
E-mail: zxmei@iphy.ac.cn
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Cite this article:
Saqib Nawaz Khan, Yan Wang(王燕), Lixiang Zhong(钟李祥), Huili Liang(梁会力), Xiaolong Du(杜小龙), and Zengxia Mei(梅增霞) Effect of Lewis acid-base additive on lead-free Cs2SnI6 thin film prepared by direct solution coating process 2024 Chin. Phys. B 33 087201
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