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Chin. Phys. B, 2021, Vol. 30(5): 050505    DOI: 10.1088/1674-1056/abdb1d
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A 795 nm gain coupled distributed feedback semiconductor laser based on tilted waveguides

De-Zheng Ma(马德正)1,2, Yong-Yi Chen(陈泳屹)1,†, Yu-Xin Lei(雷宇鑫)1,‡, Peng Jia(贾鹏), Feng Gao(高峰)1,2, Yu-Gang Zeng(曾玉刚)1, Lei Liang(梁磊)1, Yue Song(宋悦)1, Chun-Kao Ruan(阮春烤)1,2, Xia Liu(刘夏)1,2, Li Qin(秦莉)1, Yong-Qiang Ning(宁永强)1, and Li-Jun Wang(王立军)1,3,4
1 State key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Peng Cheng Laboratory, Shenzhen 518000, China;
4 Academician Team Innovation Center of Hainan Province, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering of HaiNan Normal University, HaiKou 570206, China
Abstract  The 795 nm distributed feedback lasers have great application in pumping the Rb D1 transition. In this paper, in order to realize specific 795 nm lasing, we designed tilted ridge distributed feedback lasers based on purely gain coupled effect induced by periodic current injection windows through changing the angle of the tilted ridge. The fabricated devices were cleaved into 2 mm-cavity-length, including 5 tilted angles. The peak output powers of all devices were above 30 mW. Single longitudinal mode lasing was realized in all tilted Fabry-Perot cavities using periodic current injection windows, with side mode suppression ratio over 30 dB. The total wavelength range covered 8.656 nm at 20 ℃. It was disclosed theoretically and experimentally that the output powers, threshold currents, and central wavelengths of the tilted ridge purely gain coupled DFB lasers were relevant to the tilted angles. The results will be instructive for future design of DFB laser arrays with different central wavelengths.
Keywords:  distributed feedback lasers      pumping rubidium atom      tilted waveguide  
Received:  10 December 2020      Revised:  09 January 2021      Accepted manuscript online:  13 January 2021
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
Fund: Project supported by the National Science and Technology Major Project of China (Grant Nos. 2017YFB0503100, 2018YFB0504600, 2018YFB2200300, and 2020YFB2205902), Frontier Science Key Program of the President of the Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC006), the National Natural Science Foundation of China (Grant Nos. 62090051, 62090052, 62090054, 11874353, 61935009, 61934003, 61904179, 61727822, 61805236, and 62004194), Science and Technology Development Project of Jilin Province, China (Grant Nos. 20200401069GX, 20200401062GX, 20200501007GX, 20200501008GX, and 20200501009GX), Special Scientific Research Project of Academician Innovation Platform in Hainan Province, China (Grant No. YSPTZX202034), Dawn Talent Training Program of CIOMP, and Independent Innovation Project of State Key Laboratory of Luminescence and Applications (Grant No. SKL1-Z-2020-02).
Corresponding Authors:  Yong-Yi Chen, Yu-Xin Lei, Peng Jia     E-mail:  chenyy@ciomp.ac.cn;leiyuxin@ciomp.ac.cn;leiyuxin@ciomp.ac.cn

Cite this article: 

De-Zheng Ma(马德正), Yong-Yi Chen(陈泳屹), Yu-Xin Lei(雷宇鑫), Peng Jia(贾鹏), Feng Gao(高峰), Yu-Gang Zeng(曾玉刚), Lei Liang(梁磊), Yue Song(宋悦), Chun-Kao Ruan(阮春烤), Xia Liu(刘夏), Li Qin(秦莉), Yong-Qiang Ning(宁永强), and Li-Jun Wang(王立军) A 795 nm gain coupled distributed feedback semiconductor laser based on tilted waveguides 2021 Chin. Phys. B 30 050505

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