Design of double-layer active frequency-selective surface with PIN diodes for stealth radome
Bin Deng(邓斌)1,2, Jian Chen(陈健)1
1 Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China; 2 Nanjing Research Institute of Electronics Technology, Nanjing 210039, China
Abstract An experimental double-layer active frequency-selective surface (AFSS) for stealth radome is proposed. The AFSS is a planar structure which is composed of a fixed frequency-selective surface (FSS), a PIN diodes array, and a DC bias network. The AFSS elements incorporating switchable PIN diodes are discussed. By means of controlling the DC bias network, it is possible to switch the frequency response for reflecting and transmitting. Measured and simulated data validate that when the incidence angle varies from 0° to 30° the AFSS produces more than -11.5 dB isolation across 6-18 GHz when forward biased. The insertion loss (IL) is less than 0.5 dB across 10-11 GHz when reverse biased.
Fund: Project supported by the National Basic Resarch Program of China (Grant No. 2014CB339800) and the National Natural Science Foundation of China (Grant No. 11173015).
Corresponding Authors:
Bin Deng
E-mail: dengbin19820925@sohu.com
Cite this article:
Bin Deng(邓斌), Jian Chen(陈健) Design of double-layer active frequency-selective surface with PIN diodes for stealth radome 2017 Chin. Phys. B 26 094101
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