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Rectifying and photovoltaic properties of ZnCo2O4 / Si heterostructure grown by pulsed laser deposition |
| School of Science, Northwestern Polytechnical University |
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Abstract ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. It is found that the ZnCo2O4/Si heterostructures shows a good rectifying behavior at five temperatures ranging from 50 K to 290 K. The measurements of photovoltaic response reveal that a photovoltage of 33mV was generated when the heterostructures were illuminated by using a 532 nm laser at 250mW/cm2 intensity and mechanically chopped at 2500 Hz. Both their photocurrents and photovoltages clearly increase with the increase of the laser intensity at room temperature. But, the photovoltage peaks of the heterostructures decrease with the increase of temperatures. It is believed that this work would open new perspectives for ZnCo2O4/Si-heterostructure-based devices.
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Received: 22 September 2013
Revised: 20 October 2013
Published: 31 October 2013
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| Fund: the Scientific Research Foundation of the Education Department of Zhejiang Province, China;Program of National Natural Science Foundation of China |
Cite this article:
Rectifying and photovoltaic properties of ZnCo2O4 / Si heterostructure grown by pulsed laser deposition Chin. Phys. B 0
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