Performance improvement of GaN based light-emitting diodes with a p-InAlGaN hole injection layer

Abstract

Abstract The characteristics of a blue light-emitting diode (LED) with a p-InAlGaN hole injection layer (HIL) is analyzed numerically. The simulation results indicate that the newly designed structure show superior optical and electrical performance , such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InAlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Keywords: InGaN light-emitting diodes (LEDs) p-InAlGaN hole injection layer (HIL) numerical simulation

Received: 26 July 2013
Published: 31 October 2013

Fund: he National Natural Science Foundation of China;Natural Science Fundamental Research Project of Jiangsu Colleges and Universities

Cite this article:

. Performance improvement of GaN based light-emitting diodes with a p-InAlGaN hole injection layer. Chin. Phys. B, , (): 0.

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