Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

doi:10.1088/1674-1056/22/8/086803

Abstract We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

Keywords: V-shaped pits light-extraction efficiency forward voltage

Received: 13 January 2013
Revised: 01 April 2013
Accepted manuscript online:

PACS:	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	71.55.Eq	(III-V semiconductors)
	78.45.+h	(Stimulated emission)
	78.60.Lc	(Optically stimulated luminescence)

Fund: Project supported by the Natural Science Foundation of Fujian Province, China (Grant No. 2012J01280).

Corresponding Authors: Huang Xiao-Jing
E-mail: xjhuang@jmu.edu.cn

Cite this article:

Wang Min-Shuai (王敏帅), Huang Xiao-Jing (黄晓菁) Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits 2013 Chin. Phys. B 22 086803

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Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

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