Quantum diffusion in bilateral doped chains

doi:10.1088/1674-1056/20/7/076701

Abstract In this paper, we quantitatively study the quantum diffusion in a bilateral doped chain, which is randomly doped on both sides. A tight binding approximation and quantum dynamics are used to calculate the three electronic characteristics: autocorrelation function C(t), the mean square displacement d(t) and the participation number P(E) in different doping situations. The results show that the quantum diffusion is more sensitive to the small ratio of doping than to the big one, there exists a critical doping ratio q₀, and C(t), d(t) and P(E) have different variation trends on different sides of q₀. For the self-doped chain, the doped atoms have tremendous influence on the central states of P(E), which causes the electronic states distributed in other energy bands to aggregate to the central band (E=0) and form quasi-mobility edges there. All of the doped systems experience an incomplete transition of metal-semiconductor-metal.

Keywords: quantum diffusion doped chain metal semiconductor transition

Received: 12 December 2010
Revised: 23 January 2011
Accepted manuscript online:

PACS:	67.80.dj	(Defects, impurities, and diffusion)
	71.55.Jv	(Disordered structures; amorphous and glassy solids)
	71.30.+h	(Metal-insulator transitions and other electronic transitions)

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Jin Fu-Bao(金福报), Zhang Kai-Wang(张凯旺), and Zhong Jian-Xin(钟建新) Quantum diffusion in bilateral doped chains 2011 Chin. Phys. B 20 076701

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[1]	Quantum diffusion in semi-infinite periodic and quasiperiodic systems Zhang Kai-Wang(张凯旺). Chin. Phys. B, 2008, 17(3): 1113-1118.

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