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Chinese Physics, 2005, Vol. 14(1): 208-211    DOI: 10.1088/1009-1963/14/1/038
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Electron tunnelling phase time and dwell time through an associated delta potential barrier

Bai Er-Juan (白尔隽)a, Shu Qi-Qing (舒启清)b
a Institute of Applied Nuclear Technology, Shenzhen University, Shenzhen 518060, China; b School of Science, Shenzhen University, Shenzhen 518060, China
Abstract  The electron tunnelling phase time τp and dwell time τD through an associated delta potential barrier U(x)=ξδ(x) are calculated and both are in the order of 10171016s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc=2/meξ and the characteristic energy Ec=meξ2/2 of the delta barrier, where me is the electron mass, lc and Ec are assumed to be the effective width and height of the delta barrier with lcEc=ξ, respectively. It is found that τD reaches its maximum and τD=τp as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc=λDB, λDB is de Broglie wave length of the electron.
Keywords:  associated delta potential barrier      tunnelling phase times      tunnelling dwell times charac-teristic length      characteristic energy  
Received:  15 October 2003      Revised:  20 July 2004      Accepted manuscript online: 
PACS:  7340G  
  7210B  
  0365B  
Fund: Project supported by the Shenzhen Research and Development Programme on Science and Technology

Cite this article: 

Bai Er-Juan (白尔隽), Shu Qi-Qing (舒启清) Electron tunnelling phase time and dwell time through an associated delta potential barrier 2005 Chinese Physics 14 208

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