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Chinese Physics, 2003, Vol. 12(5): 483-487    DOI: 10.1088/1009-1963/12/5/304
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Experimental study on the activation process of GaAs spin-polarized electron source

Ruan Cun-Jun (阮存军)
Department of Physics, Tsinghua University, Beijing 100084, China
Abstract  GaAs spin-polarized electron source is a new kind of electron source, where the GaAs semiconductor crystal is used as a photocathode under the irradiation of helicity light. In this paper the activation process of the GaAs spin-polarized electron source is investigated experimentally in detail, during which the negative electron affinity of the photo cathode should be achieved more carefully by absorbing the caesium and oxygen on the surface of the GaAs crystal under ultrahigh vacuum conditions. Besides the different activation processes, the important physical parameters are studied to achieve the optimum activation results. At the same time the stability and lifetime of the polarized electron beam are explored for future experiments. Some important experimental data have been acquired.
Keywords:  spin-polarized electron source      negative electron affinity      activation process  
Received:  26 July 2002      Revised:  20 January 2003      Accepted manuscript online: 
PACS:  29.25.Bx (Electron sources)  
  85.60.Ha (Photomultipliers; phototubes and photocathodes)  
  61.80.-x (Physical radiation effects, radiation damage)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10074037).

Cite this article: 

Ruan Cun-Jun (阮存军) Experimental study on the activation process of GaAs spin-polarized electron source 2003 Chinese Physics 12 483

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