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The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced
chemical vapour deposition and the fabrication of solar cells
陈永生, 汪建华, 卢景霄, 郑文, 谷锦华, 杨仕娥, 郜小勇, 郭学军, 赵尚丽, 高 哲
2008 (9):
3464-3470.
doi: 10.1088/1674-1056/17/9/054
摘要
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This paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with H$_{2}$ prior to plasma ignition, and selecting
proper discharging time after silane flow injection. Material
prepared under these conditions at a deposition rate of 0.78\,nm/s
maintains higher crystallinity and fine electronic properties. By
H-plasma treatment before i-layer deposition, single junction $\mu
$c-Si:H solar cells with 5.5{\%} efficiency are fabricated.
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