Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

doi:10.1088/1674-1056/17/9/056

中国物理B ›› 2008, Vol. 17 ›› Issue (9): 3479-3483.doi: 10.1088/1674-1056/17/9/056

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

林桂江¹, 赖虹凯¹, 李成¹, 陈松岩¹, 余金中²

(1)Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China; (2)Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2007-12-15 修回日期:2007-12-29 出版日期:2008-09-08 发布日期:2008-09-08
基金资助:
Project supported by National Natural Science Foundation of China (Grant Nos 50672079, 60336010 and 60676027) and National Basic Research Program of China (Grant No 2007CB613400).

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

Lin Gui-Jiang(林桂江)^a)†, Lai Hong-Kai(赖虹凯)^a), Li Cheng(李成)^a), Chen Song-Yan(陈松岩)^a), and Yu Jin-Zhong(余金中)^a)b)

^a Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China; ^b State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2007-12-15 Revised:2007-12-29 Online:2008-09-08 Published:2008-09-08
Supported by:
Project supported by National Natural Science Foundation of China (Grant Nos 50672079, 60336010 and 60676027) and National Basic Research Program of China (Grant No 2007CB613400).

摘要/Abstract

摘要： The hole subband structures and effective masses of tensile strained Si/Si$_{1 - y }$Ge$_{y}$ quantum wells are calculated by using the 6$\times $6 $k\cdot p$ method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si$_{0.55}$Ge$_{0.45}$ quantum well grown on a relaxed Si$_{0.5}$Ge$_{0.5}$ (100) substrates shows a large absorption coefficient of 8400 cm$^{ - 1}$.

关键词: Si/SiGe, tensile strain, effective mass, valence intersubband transition

Abstract: The hole subband structures and effective masses of tensile strained Si/Si$_{1 - y }$Ge$_{y}$ quantum wells are calculated by using the 6$\times $6 k $\cdot$ p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si$_{0.55}$Ge$_{0.45}$ quantum well grown on a relaxed Si$_{0.5}$Ge$_{0.5}$ (100) substrates shows a large absorption coefficient of 8400 cm$^{ - 1}$.

Key words: Si/SiGe, tensile strain, effective mass, valence intersubband transition

中图分类号: (Quantum wells)

73.21.Fg

62.20.F- (Deformation and plasticity) 62.25.-g (Mechanical properties of nanoscale systems) 71.15.-m (Methods of electronic structure calculations) 71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor) 81.40.Lm (Deformation, plasticity, and creep)

林桂江, 赖虹凯, 李成, 陈松岩, 余金中. Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells[J]. 中国物理B, 2008, 17(9): 3479-3483.

Lin Gui-Jiang(林桂江), Lai Hong-Kai(赖虹凯), Li Cheng(李成), Chen Song-Yan(陈松岩), and Yu Jin-Zhong(余金中). Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells[J]. Chin. Phys. B, 2008, 17(9): 3479-3483.

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Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

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