中国物理B ›› 2008, Vol. 17 ›› Issue (9): 3495-3498.doi: 10.1088/1674-1056/17/9/059

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Temperature-driven spin reorientation transitionof magnetron sputtered nickel thin film

宋小会, 张殿琳   

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2008-03-27 修回日期:2008-04-07 出版日期:2008-09-08 发布日期:2008-09-08
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10334080).

Temperature-driven spin reorientation transitionof magnetron sputtered nickel thin film

Song Xiao-Hui(宋小会)† and Zhang Dian-Lin(张殿琳)   

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2008-03-27 Revised:2008-04-07 Online:2008-09-08 Published:2008-09-08
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10334080).

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摘要： The temperature-driven spin reorientation transition of magnetron sputtered Ni/Si (111) systems has been studied. The relationship between ac initial susceptibility and temperature of nickel films with different thicknesses shows that the magnetization orientation changes from in-plane to out-of-plane with the increase of temperature. The temperature dependence of magnetoelastic, magneto-crystalline, and magnetostatic anisotropies determines the direction of the reorientation transition. The temperature-driven spin reorientation transition is supported by Hall coefficient measurements which show that its temperature dependence is similar to that of susceptibility.

Abstract: The temperature-driven spin reorientation transition of magnetron sputtered Ni/Si (111) systems has been studied. The relationship between ac initial susceptibility and temperature of nickel films with different thicknesses shows that the magnetization orientation changes from in-plane to out-of-plane with the increase of temperature. The temperature dependence of magnetoelastic, magneto-crystalline, and magnetostatic anisotropies determines the direction of the reorientation transition. The temperature-driven spin reorientation transition is supported by Hall coefficient measurements which show that its temperature dependence is similar to that of susceptibility.

Key words: magnetic anisotropy, spin reorientation transition, ac initial susceptibility

中图分类号:  (Magnetic properties of monolayers and thin films)

  • 75.70.Ak
72.15.Gd (Galvanomagnetic and other magnetotransport effects) 75.30.Cr (Saturation moments and magnetic susceptibilities) 75.30.Gw (Magnetic anisotropy) 75.30.Kz (Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)) 75.80.+q (Magnetomechanical effects, magnetostriction)