中国物理B ›› 2008, Vol. 17 ›› Issue (9): 3448-3452.doi: 10.1088/1674-1056/17/9/051

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Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

张丽平, 张建军, 尚泽仁, 胡增鑫, 耿新华, 赵颖   

  1. Institute of Photo-Electronics Thin Film Devices and Technique, Nankai University, Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and TechnologyLaboratory of Opto-electronic Information Science and Technology(Nankai University, Tianjin Unive
  • 收稿日期:2007-12-01 修回日期:2007-12-27 出版日期:2008-09-08 发布日期:2008-09-08
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant Nos 2006CB202602 and 2006CB202603), the Tianjin Research Foundation for Basic Research, China (Grant No 08JCZDJC 22200), and International Cooperative Project of th

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

Zhang Li-Ping(张丽平)†, Zhang Jian-Jun(张建军), Shang Ze-Ren(尚泽仁), Hu Zeng-Xin(胡增鑫), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖)   

  1. Institute of Photo-Electronics Thin Film Devices and Technique, Nankai University, Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology Laboratory of Opto-electronic Information Science and Technology (Nankai University, Tianjin University), Chinese Ministry of Education, Tianjin 300071, China
  • Received:2007-12-01 Revised:2007-12-27 Online:2008-09-08 Published:2008-09-08
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant Nos 2006CB202602 and 2006CB202603), the Tianjin Research Foundation for Basic Research, China (Grant No 08JCZDJC 22200), and International Cooperative Project of th

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摘要： A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition (VHFPA-RTCVD), is introduced to prepare SiGe:H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition (RTCVD) technology was successfully used to prepare SiGe:H thin films, but the temperature of the substrate needed to exceed 400\du. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo-conductivity and dark-conductivity of SiGe:H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.

关键词: SiGe:H thin film, plasma assisted RTCVD, growth rates, optoelectronics property

Abstract: A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition (VHFPA-RTCVD), is introduced to prepare SiGe:H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition (RTCVD) technology was successfully used to prepare SiGe:H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo-conductivity and dark-conductivity of SiGe:H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.

Key words: SiGe:H thin film, plasma assisted RTCVD, growth rates, optoelectronics property

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
68.37.Ps (Atomic force microscopy (AFM)) 68.55.-a (Thin film structure and morphology) 68.55.A- (Nucleation and growth) 73.50.Pz (Photoconduction and photovoltaic effects) 78.30.Hv (Other nonmetallic inorganics)