中国物理B ›› 2008, Vol. 17 ›› Issue (9): 3464-3470.doi: 10.1088/1674-1056/17/9/054
The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells
汪建华1, 陈永生2, 卢景霄3, 郑文3, 谷锦华3, 杨仕娥3, 郜小勇3, 郭学军3, 赵尚丽3, 高 哲3
- (1)Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China; (2)Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China;Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; (3)Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China
The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells
Chen Yong-Sheng(陈永生)a)b)†, Wang Jian-Hua(汪建华)c), Lu Jing-Xiao(卢景霄)b), Zheng Wen(郑文)b), Gu Jin-Hua(谷锦华)b), Yang Shi-E(杨仕娥)b), Gao Xiao-Yong(郜小勇)b), Guo Xue-Jun(郭学军)b), Zhao Shang-Li(赵尚丽)b), and Gao Zhe(高哲)b)
- a Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China; b Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; c Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China
摘要： This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.
中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
- 81.15.Gh