中国物理B ›› 2008, Vol. 17 ›› Issue (9): 3428-3432.doi: 10.1088/1674-1056/17/9/047

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Simulation of plasma doping process by using the localized molecular dynamics method

于民1, 任黎明1, 张兴1, 黄如1, 冀会辉2, 张有光3   

  1. (1)Department of Microelectronics, Peking University, Beijing 100871, China; (2)Department of Microelectronics, Peking University, Beijing 100871, China;School of Electronic and Information Engineering, Beihang University, Beijing 100083, China; (3)School of Electronic and Information Engineering, Beihang University, Beijing 100083, China
  • 收稿日期:2008-02-27 修回日期:2008-05-05 出版日期:2008-09-08 发布日期:2008-09-08
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60676022, 60625403 and 90707006), and State Key Program for Basic Research of China (Grant No 2006CB302701).

Simulation of plasma doping process by using the localized molecular dynamics method

Ji Hui-Hui(冀会辉)a)b), Yu Min(于民)a)†, Ren Li-Ming(任黎明)a), Zhang Xing(张兴)a), Huang Ru(黄如)a), and Zhang You-Guang(张有光)b)   

  1. a Department of Microelectronics, Peking University, Beijing 100871, China; b School of Electronic and Information Engineering, Beihang University, Beijing 100083, China
  • Received:2008-02-27 Revised:2008-05-05 Online:2008-09-08 Published:2008-09-08
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60676022, 60625403 and 90707006), and State Key Program for Basic Research of China (Grant No 2006CB302701).

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摘要： Plasma doping is the candidate for semiconductor doping. Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing. In this paper, the plasma doping process simulation is performed by using the localized molecular dynamics method. Models that involve the statistics of the implanted compositions, angles and energies are developed. The effect of the model on simulation results is studied. The simulation results about the doping concentration profile are supported by experimental data.

关键词: plasma doping, simulation, molecular dynamics

Abstract: Plasma doping is the candidate for semiconductor doping. Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing. In this paper, the plasma doping process simulation is performed by using the localized molecular dynamics method. Models that involve the statistics of the implanted compositions, angles and energies are developed. The effect of the model on simulation results is studied. The simulation results about the doping concentration profile are supported by experimental data.

Key words: plasma doping, simulation, molecular dynamics

中图分类号:  (Other materials)

  • 61.72.up
61.72.S- (Impurities in crystals) 85.40.Ry (Impurity doping, diffusion and ion implantation technology)