中国物理B ›› 2008, Vol. 17 ›› Issue (9): 3471-3478.doi: 10.1088/1674-1056/17/9/055

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Self-organized GaN/AlN hexagonal quantum-dots:strain distribution and electronic structure

任晓敏1, 刘玉敏2, 俞重远2, 徐子欢2   

  1. (1)Key Laboratory of Optical Communication and Lightwave Technologies of Ministry of Education (Beijing University of Posts and Telecommunications), Beijing 100876, China; (2)School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;Key Laboratory of Optical Communication and Lightwave Technologies of Ministry of Education (Beijing University of Posts and Telecommunications), Beijing 100876,
  • 收稿日期:2008-03-03 修回日期:2008-03-30 出版日期:2008-09-08 发布日期:2008-09-08
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2003CB314901), the National Natural Science Foundation of China (Grant No 60644004), and High School Innovation and Introducing Intellect Project of China (Grant

Self-organized GaN/AlN hexagonal quantum-dots:strain distribution and electronic structure

Liu Yu-Min(刘玉敏)a)b)†, Yu Zhong-Yuan(俞重远)a)b), Ren Xiao-Min(任晓敏)b), and Xu Zi-Huan(徐子欢)a)b)   

  1. a School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China; b Key Laboratory of Optical Communication and Lightwave Technologies of Ministry of Education (Beijing University of Posts and Telecommunications), Beijing 100876, China
  • Received:2008-03-03 Revised:2008-03-30 Online:2008-09-08 Published:2008-09-08
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2003CB314901), the National Natural Science Foundation of China (Grant No 60644004), and High School Innovation and Introducing Intellect Project of China (Grant

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摘要： This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shr\"{o}dinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.

关键词: quantum dot, strain, electronic structure

Abstract: This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shrödinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.

Key words: quantum dot, strain, electronic structure

中图分类号:  (Surface states, band structure, electron density of states)

  • 73.20.At
62.20.D- (Elasticity) 62.25.-g (Mechanical properties of nanoscale systems) 71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor) 73.21.La (Quantum dots)