中国物理B ›› 2008, Vol. 17 ›› Issue (9): 3363-3366.doi: 10.1088/1674-1056/17/9/036

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Influence of patterned TiO2/SiO2 dielectric multilayers for back and front mirror facetson GaN-based laser diodes

叶学敏1, 赵太平1, 杜为民1, 陈伟华2, 胡晓东2, 代涛2, 李睿2, 杨志坚2, 张国义2   

  1. (1)Institute of Modern Optics, School of Physics, Peking University, Beijing 100871, China; (2)State Key Laboratory for Mesoscopic Physics and Department of Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2008-01-31 修回日期:2008-03-14 出版日期:2008-09-08 发布日期:2008-09-08
  • 基金资助:
    Project supported by the National High Technology Program of China (Grant No 2007AA03Z403), the National Natural Science Foundation of China (Grant Nos 60776042 and 60477011), and National Basic Research Program of China (Grand No 2006CB921607).

Influence of patterned TiO2/SiO2 dielectric multilayers for back and front mirror facetson GaN-based laser diodes

Chen Wei-Hua(陈伟华)a), Hu Xiao-Dong(胡晓东)a)$^†$, Dai Tao(代涛)a), Li Rui(李睿)a), Ye Xue-Min(叶学敏)b), Zhao Tai-Ping(赵太平)b), Du Wei-Min(杜为民)b), Yang Zhi-Jian(杨志坚)a), and Zhang Guo-Yi(张国义)a)   

  1. a State Key Laboratory for Mesoscopic Physics and Department of Physics, School of Physics, Peking University, Beijing 100871, China; b Institute of Modern Optics, School of Physics, Peking University, Beijing 100871, China
  • Received:2008-01-31 Revised:2008-03-14 Online:2008-09-08 Published:2008-09-08
  • Supported by:
    Project supported by the National High Technology Program of China (Grant No 2007AA03Z403), the National Natural Science Foundation of China (Grant Nos 60776042 and 60477011), and National Basic Research Program of China (Grand No 2006CB921607).

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摘要： Ridge InGaN multi-quantum-well-structure (MQW) edge-emitting laser diodes (LDs) were grown on (0001) sapphire substrates by low-pressure metal-organic chemical vapour deposition (MOCVD). The dielectric TiO$_{2}$/SiO$_{2}$ front and back facet coatings as cavity mirror facets of the LDs have been deposited with electron-beam evaporation method. The reflectivity of the designed front coating is about 50{\%} and that of the back high reflective coating is as high as 99.9{\%}. Under pulsed current injection at room temperature, the influences of the dielectric facets were discussed. The threshold current of the ridge GaN-based LDs was decreased after the deposition of the back high reflective dielectric mirrors and decreased again after the front facets were deposited. Above the threshold, the slope efficiency of the LDs with both reflective facets was larger than those with only back facets and without any reflective facets. It is important to design the reflectivity of the front facets for improving the performance of GaN-based LDs.

关键词: dielectric multilayers, GaN-based LD, stimulated emission, threshold current

Abstract: Ridge InGaN multi-quantum-well-structure (MQW) edge-emitting laser diodes (LDs) were grown on (0001) sapphire substrates by low-pressure metal-organic chemical vapour deposition (MOCVD). The dielectric TiO$_{2}$/SiO$_{2}$ front and back facet coatings as cavity mirror facets of the LDs have been deposited with electron-beam evaporation method. The reflectivity of the designed front coating is about 50% and that of the back high reflective coating is as high as 99.9%. Under pulsed current injection at room temperature, the influences of the dielectric facets were discussed. The threshold current of the ridge GaN-based LDs was decreased after the deposition of the back high reflective dielectric mirrors and decreased again after the front facets were deposited. Above the threshold, the slope efficiency of the LDs with both reflective facets was larger than those with only back facets and without any reflective facets. It is important to design the reflectivity of the front facets for improving the performance of GaN-based LDs.

Key words: dielectric multilayers, GaN-based LD, stimulated emission, threshold current

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
42.55.Px (Semiconductor lasers; laser diodes) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))