Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

doi:10.1088/1674-1056/ac3739

中国物理B ›› 2022, Vol. 31 ›› Issue (6): 68501-068501.doi: 10.1088/1674-1056/ac3739

Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

Yun-Long He(何云龙)^†, Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃)

Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2021-08-26 修回日期:2021-10-22 接受日期:2021-11-06 出版日期:2022-05-17 发布日期:2022-06-06
通讯作者: Yun-Long He E-mail:ylhe@xidian.edu.cn
基金资助:
This work was supported by the National Natural Science Foundation of China (Grant No. 62004150), Postdoctoral Science Foundation of China (Grant No. 2018M643575), the Fundamental Research Funds for the Central Universities, and the Innovation Fund of Xidian University (Grant No. JB211104).

Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

Yun-Long He(何云龙)^†, Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃)

Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2021-08-26 Revised:2021-10-22 Accepted:2021-11-06 Online:2022-05-17 Published:2022-06-06
Contact: Yun-Long He E-mail:ylhe@xidian.edu.cn
Supported by:
This work was supported by the National Natural Science Foundation of China (Grant No. 62004150), Postdoctoral Science Foundation of China (Grant No. 2018M643575), the Fundamental Research Funds for the Central Universities, and the Innovation Fund of Xidian University (Grant No. JB211104).

摘要/Abstract

摘要： A novel normally-off AlGaN/GaN high-electron-mobility transistor (HEMT) with a p-GaN Schottky hybrid gate (PSHG) is proposed, and compared with the conventional p-GaN normally-off AlGaN/GaN HEMTs. This structure can be realized by selective etching of p-GaN layer, which enables the Schottky junction and PN junction to control the channel charge at the same time. The direct current (DC) and switching characteristics of the PSHG HEMTs are simulated by Slivaco TCAD, and the p-GaN HEMTs and conventional normally-on HEMTs are also simulated for comparison. The simulation results show that the PSHG HEMTs have a higher current density and a lower on-resistance than p-GaN HEMTs, which is more obvious with the decrease of p-GaN ratios of the PSHG HEMTs. The breakdown voltage and threshold voltage of the PSHG HEMTs are very close to those of the p-GaN HEMTs. In addition, the PSHG HEMTs have a higher switching speed than the conventional normally-on HEMTs, and the p-GaN layer ratio has no obvious effect on the switching speed.

关键词: normally-off high-electron-mobility transistor, AlGaN/GaN, p-GaN

Abstract: A novel normally-off AlGaN/GaN high-electron-mobility transistor (HEMT) with a p-GaN Schottky hybrid gate (PSHG) is proposed, and compared with the conventional p-GaN normally-off AlGaN/GaN HEMTs. This structure can be realized by selective etching of p-GaN layer, which enables the Schottky junction and PN junction to control the channel charge at the same time. The direct current (DC) and switching characteristics of the PSHG HEMTs are simulated by Slivaco TCAD, and the p-GaN HEMTs and conventional normally-on HEMTs are also simulated for comparison. The simulation results show that the PSHG HEMTs have a higher current density and a lower on-resistance than p-GaN HEMTs, which is more obvious with the decrease of p-GaN ratios of the PSHG HEMTs. The breakdown voltage and threshold voltage of the PSHG HEMTs are very close to those of the p-GaN HEMTs. In addition, the PSHG HEMTs have a higher switching speed than the conventional normally-on HEMTs, and the p-GaN layer ratio has no obvious effect on the switching speed.

Key words: normally-off high-electron-mobility transistor, AlGaN/GaN, p-GaN

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Tv (Field effect devices)

Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate[J]. 中国物理B, 2022, 31(6): 68501-068501.

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Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

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