Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands

doi:10.1088/1674-1056/ab7224

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 47701-047701.doi: 10.1088/1674-1056/ab7224

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands

Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威)

1 School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China;
2 School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China

收稿日期:2019-11-19 修回日期:2020-01-15 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Zhen-Jie Tang E-mail:zjtang@hotmail.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51402004) and the Science and Technology Research Key Project of Education Department of Henan Province of China (Grant No. 19A140001).

Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands

Zhen-Jie Tang(汤振杰)¹, Rong Li(李荣)², Xi-Wei Zhang(张希威)¹

1 School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China;
2 School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China

Received:2019-11-19 Revised:2020-01-15 Online:2020-04-05 Published:2020-04-05
Contact: Zhen-Jie Tang E-mail:zjtang@hotmail.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51402004) and the Science and Technology Research Key Project of Education Department of Henan Province of China (Grant No. 19A140001).

摘要/Abstract

摘要： Designed Zr_xSi_1-xO₂ films with combining bent and flat energy bands are employed as a charge trapping layer for memory capacitors. Compared to a single bent energy band, the bandgap structure with combining bent and flat energy bands exhibits larger memory window, faster program/erase speed, lower charge loss even at 200℃ for 10⁴ s, and wider temperature insensitive regions. The tunneling thickness together with electron recaptured efficiency in the trapping layer, and the balance of two competing electron loss mechanisms in the bent and flat energy band regions collectively contribute to the improved memory characteristics. Therefore, the proposed Zr_xSi_1-xO₂ with combining bent and flat energy bands should be a promising candidate for future nonvolatile memory applications, taking into consideration of the trade-off between the operation speed and retention characteristics.

关键词: nonvolatile memory, bent and flat energy bands, charge trapping, memory capacitor

Abstract: Designed Zr_xSi_1-xO₂ films with combining bent and flat energy bands are employed as a charge trapping layer for memory capacitors. Compared to a single bent energy band, the bandgap structure with combining bent and flat energy bands exhibits larger memory window, faster program/erase speed, lower charge loss even at 200℃ for 10⁴ s, and wider temperature insensitive regions. The tunneling thickness together with electron recaptured efficiency in the trapping layer, and the balance of two competing electron loss mechanisms in the bent and flat energy band regions collectively contribute to the improved memory characteristics. Therefore, the proposed Zr_xSi_1-xO₂ with combining bent and flat energy bands should be a promising candidate for future nonvolatile memory applications, taking into consideration of the trade-off between the operation speed and retention characteristics.

Key words: nonvolatile memory, bent and flat energy bands, charge trapping, memory capacitor

中图分类号: (For silicon electronics)

77.55.df

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

汤振杰, 李荣, 张希威. Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands[J]. 中国物理B, 2020, 29(4): 47701-047701.

Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威). Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands[J]. Chin. Phys. B, 2020, 29(4): 47701-047701.

参考文献 38

[1]	Zhuang J Q, Han S T, Zhou Y and Roy V A L 2014 J. Mater. Chem. C 2 4233 doi: 10.1039/C4TC00010B
[2]	Lee J S, Cho J, Lee C, Kim I, Park J, Kim Y M, Shin H, Lee J and Caruso F 2007 Nat. Nanotech. 2 790 doi: 10.1038/nnano.2007.380
[3]	Liu L F, Pan L Y, Zhang Z G and Xu J 2015 Chin. Phys. Lett. 32 088501 doi: 10.1088/0256-307X/32/8/088501
[4]	Shen J X, Shang D S and Sun Y 2018 Acta Phys. Sin. 67 127501 (in Chinese)
[5]	Congedo G, Lamperti A, Salicio O and Spigaz S 2013 ECS J. Solid State Sci. Technol. 2 N1
[6]	Liu L, Xu J P, Ji F, Chen J X and Lai P T 2012 Appl. Phys. Lett. 101 133503 doi: 10.1063/1.4754830
[7]	Wang H, Ren D L, Lu C and Yan X B 2018 Appl. Phys. Lett. 112 231903 doi: 10.1063/1.5024799
[8]	Hou Z Z, Wu Z H and Yin H X 2018 ECS J. Solid State Sci. Technol. 7 N91
[9]	Zhu C X, Huo Z L, Xu Z G, Zhang M H, Wang Q, Liu J, Long S B and Liu M 2010 Appl. Phys. Lett. 97 253503 doi: 10.1063/1.3531559
[10]	You H W and Cho W J 2010 Appl. Phys. Lett. 96 093506 doi: 10.1063/1.3337103
[11]	Naitoh Y, Suga H, Abe T, Otsu K, Umeta Y, Sumiya T, Shima H, Tsukagoshi K and Akinaga H 2018 Appl. Phys. Express 11 085202 doi: 10.7567/APEX.11.085202
[12]	Wang C, Xu Y H, Chen S Y, Li C, Wang J Y, Huang W, Lai H K and Guo R R 2018 Chin. Phys. B 27 067303 doi: 10.1088/1674-1056/27/6/067303
[13]	Liu X J, Zhu L, Gao M Y, Li X F, Cao Z Y, Zhai H F, Li A D and Wu D 2014 Appl. Surf. Sci. 289 332 doi: 10.1016/j.apsusc.2013.10.160
[14]	Bar R, Aluguri R, Manna S, Ghosh A, Satyam P V and Ray S K 2015 Appl. Phys. Lett. 107 093102 doi: 10.1063/1.4929828
[15]	Lin C C, Chang T C, Tu C H, Chen S C, Hu C W, Sze S M, Tseng T Y, Chen S C and Lin J Y 2010 J. Phys. D: Appl. Phys. 43 075106 doi: 10.1088/0022-3727/43/7/075106
[16]	Lin Y H, Chien C H, Lin C T, Chang C Y and Lei T F 2005 IEEE Electron Device Lett. 26 154 doi: 10.1109/LED.2004.842727
[17]	Maikap S, Wang T Y, Tzeng P J, Lin C H, Lee L S, Yang J R and Tsai M J 2007 Appl. Phys. Lett. 90 253108 doi: 10.1063/1.2749857
[18]	Tang Z J, Li R and Zhu X H 2015 Appl. Phys. Express 8 094201 doi: 10.7567/APEX.8.094201
[19]	Tang Z J, Li R and Yin J 2013 Chin. Phys. B 22 067702 doi: 10.1088/1674-1056/22/6/067702
[20]	Yao Y, Li C, Huo Z L, Liu M, Zhu C X, Gu C Z, Duan X F, Wang Y G, Gu L and Yu R C 2013 Nat. Commun. 4 2764 doi: 10.1038/ncomms3764
[21]	Jiang X W, Dai G Z, Lu S B, Yu J, Dai Y H and Chen J N 2015 Acta Phys. Sin. 64 091301 (in Chinese)
[22]	Dai G Z, Dai Y H, Xu T L, Yu J, Zhao Y Y, Chen J N and Liu Q 2014 Acta Phys. Sin. 63 123101 (in Chinese)
[23]	Huang X D, Shi R P and Lai P T 2014 Appl. Phys. Lett. 104 162905 doi: 10.1063/1.4873388
[24]	Pan T M and Yu T Y 2009 Semicond. Sci. Technol. 24 095022 doi: 10.1088/0268-1242/24/9/095022
[25]	Tsai P H, Chang-Liao K S, Liu C Y, Wang T K, Tzeng P J, Lin C H, Lee L S and Tsai M J 2008 IEEE Electron Device Lett. 29 265 doi: 10.1109/LED.2007.915380
[26]	Tang Z J, Lu X B, Yang Y P, Zhang J, Ma D W, Li R, Zhang X W, Hu D and Li T X 2015 Semicond. Sci. Technol. 30 065010 doi: 10.1088/0268-1242/30/6/065010
[27]	Hou Z Z, Wu Z H and Yin H X 2018 ECS J. Solid State Sci. Technol. 7 Q229
[28]	Tang Z J, Li R and Yin J 2013 Chin. Phys. B 22 097701 doi: 10.1088/1674-1056/22/9/097701
[29]	Zhou Y, Yin J, Xu H N, Xia Y D, Liu Z G, Li A D, Gong Y P, Pu L, Yan F and Shi Y 2010 Appl. Phys. Lett. 97 143504 doi: 10.1063/1.3496437
[30]	Tang Z J, Li R, Zhang X W, Geng H J, Zang S P, Zheng H Y, Lian M C and Hu N N 2018 Semicond. Sci. Technol. 33 125006 doi: 10.1088/1361-6641/aae75e
[31]	Liu L, Xu J P, Ji F, Chen J X and Lai P T 2012 Appl. Phys. Lett. 101 033501 doi: 10.1063/1.4737158
[32]	Wang J C, Lai C S, Chen Y K, Lin C T, Liu C P, Huang M R S and Fang Y C 2009 Electrochem. Solid-State Lett. 12 H202
[33]	Tang Z J, Geng H J, Li R and Zhang X W 2019 Appl. Phys. Express 12 074007 doi: 10.7567/1882-0786/ab282e
[34]	Tahir D, Lee E K, Oh S K, Tham T T, Kang H J, Jin H, Heo S, Park J C, Chung J G and Lee J C 2009 Appl. Phys. Lett. 94 212902 doi: 10.1063/1.3143223
[35]	Wang Y and White M H 2005 Solid-State Electron. 49 97 doi: 10.1016/j.sse.2004.06.009
[36]	Kim T H, Sim J S, Lee J D, Shin H C and Park B G 2004 Appl. Phys. Lett. 85 660 doi: 10.1063/1.1773615
[37]	Kim T H, Park I H, Lee J D, Shin H C and Park B G 2006 Appl. Phys. Lett. 89 063508 doi: 10.1063/1.2335619
[38]	Wang Y Q, Hwang W S, Zhang G, Samudra G, Yeo Y C and Yoo W J 2007 IEEE Trans. Electron. Devices 54 2699 doi: 10.1109/TED.2007.904396

Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands

Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 38

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack[J]. 中国物理B, 2023, 32(1): 18503-018503.
[2]	白冰, 王宏, 李岩, 郝云霞, 张博, 王博平, 王子航, 杨红旗, 高启航, 吕超, 张庆顺, 闫小兵. Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer[J]. 中国物理B, 2019, 28(10): 106802-106802.
[3]	王尘, 许怡红, 陈松岩, 李成, 汪建元, 黄巍, 赖虹凯, 郭榕榕. Improved performance of Au nanocrystal nonvolatile memory by N₂-plasma treatment on HfO₂ blocking layer[J]. 中国物理B, 2018, 27(6): 67303-067303.
[4]	于杰, 陈坤基, 马忠元, 张鑫鑫, 江小帆, 吴仰晴, 黄信凡, Shunri Oda. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices[J]. 中国物理B, 2016, 25(9): 97304-097304.
[5]	伦志远, 李云, 赵凯, 杜刚, 刘晓彦, 王漪. Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level[J]. 中国物理B, 2016, 25(8): 88502-088502.
[6]	刘新宇, 王弋宇, 彭朝阳, 李诚瞻, 吴佳, 白云, 汤益丹, 刘可安, 申华军. Charge trapping behavior and its origin in Al₂O₃/SiC MIS system[J]. 中国物理B, 2015, 24(8): 87304-087304.
[7]	Khasan S. Karimov, Zubair Ahmad, Farid Touati, M. Mahroof-Tahir, M. Muqeet Rehman, S. Zameer Abbas. Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H₂Pc heterojunction[J]. 中国物理B, 2015, 24(11): 116102-116102.
[8]	褚玉琼, 张满红, 霍宗亮, 刘明. Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack[J]. , 2014, 23(8): 88501-088501.
[9]	蓝澜, 苟鸿雁, 丁士进, 张卫. Low voltage program-erasable Pd-Al₂O₃-Si capacitors with Ru nanocrystals for nonvolatile memory application[J]. 中国物理B, 2013, 22(11): 117308-117308.
[10]	金林, 张满红, 霍宗亮, 王永, 余兆安, 姜丹丹, 陈军宁, 刘明. A simple and accurate method to measure program/erase speed in a memory capacitor structure[J]. Chin. Phys. B, 2013, 22(1): 18501-018501.
[11]	彭雅华, 刘晓彦, 杜刚, 刘飞, 金锐, 康晋锋 . The influence of thermally assisted tunneling on the performance of charge trapping memory[J]. 中国物理B, 2012, 21(7): 78501-078501.
[12]	郑志威, 霍宗亮, 朱晨昕, 许中广, 刘璟, 刘明. Improved charge trapping flash device with Al₂O₃/HfSiO stack as blocking layer[J]. 中国物理B, 2011, 20(10): 108501-108501.
[13]	魏斌, 廖英杰, 刘纪忠, 路林, 曹进, 王军, 张建华. Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting diodes on the dye species and current density[J]. 中国物理B, 2010, 19(3): 37105-037105.
[14]	王利, 孙红芳, 周惠华, 朱静. Preparation of size controllable copper nanocrystals for nonvolatile memory applications[J]. 中国物理B, 2010, 19(10): 108102-108102.
[15]	宋云成, 刘晓彦, 杜刚, 康晋锋, 韩汝琦. Carriers recombination processes in charge trapping memory cell by simulation[J]. 中国物理B, 2008, 17(7): 2678-2682.