Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction

doi:10.1088/1674-1056/24/11/116102

中国物理B ›› 2015, Vol. 24 ›› Issue (11): 116102-116102.doi: 10.1088/1674-1056/24/11/116102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H₂Pc heterojunction

Khasan S. Karimov^{a b}, Zubair Ahmad^c, Farid Touati^c, M. Mahroof-Tahir^d, M. Muqeet Rehman^a, S. Zameer Abbas^a

a Ghulam Ishaq Khan Institute of Engineering Science and Technology, Topi, Swabi, KPK 23460, Pakistan;
b Center for Innovative Development of Science and New Technologies, Aini St. 299/2, Dushanbe 734063, Tajikistan;
c Department of Electrical Engineering, College of Engineering, Qatar University, Doha 2713, Qatar;
d Department of Chemistry and Earth Sciences, Qatar University, Doha 2713, Qatar

收稿日期:2015-05-23 修回日期:2015-07-27 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: Zubair Ahmad E-mail:zubairtarar@qu.edu.qa
基金资助:
Project supported by the GIK Institute of Engineering Science and Technology, Pakistan and Physical Technical Institute of Academy of Sciences of Tajikistan.

Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H₂Pc heterojunction

Khasan S. Karimov^{a b}, Zubair Ahmad^c, Farid Touati^c, M. Mahroof-Tahir^d, M. Muqeet Rehman^a, S. Zameer Abbas^a

a Ghulam Ishaq Khan Institute of Engineering Science and Technology, Topi, Swabi, KPK 23460, Pakistan;
b Center for Innovative Development of Science and New Technologies, Aini St. 299/2, Dushanbe 734063, Tajikistan;
c Department of Electrical Engineering, College of Engineering, Qatar University, Doha 2713, Qatar;
d Department of Chemistry and Earth Sciences, Qatar University, Doha 2713, Qatar

Received:2015-05-23 Revised:2015-07-27 Online:2015-11-05 Published:2015-11-05
Contact: Zubair Ahmad E-mail:zubairtarar@qu.edu.qa
Supported by:
Project supported by the GIK Institute of Engineering Science and Technology, Pakistan and Physical Technical Institute of Academy of Sciences of Tajikistan.

摘要/Abstract

摘要： A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H₂Pc are fabricated by vacuum deposition of the CuPc and H₂Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30-40 μm. For the current-voltage (I-V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases ～80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior.

关键词: heterojunction nonvolatile memory, organic-on-organic, CuPc, H₂Pc

Abstract: A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H₂Pc are fabricated by vacuum deposition of the CuPc and H₂Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30-40 μm. For the current-voltage (I-V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases ～80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior.

Key words: heterojunction nonvolatile memory, organic-on-organic, CuPc, H₂Pc

中图分类号: (Organic compounds)

61.66.Hq

67.25.dp (Films)

Khasan S. Karimov, Zubair Ahmad, Farid Touati, M. Mahroof-Tahir, M. Muqeet Rehman, S. Zameer Abbas. Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H₂Pc heterojunction[J]. 中国物理B, 2015, 24(11): 116102-116102.

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Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H₂Pc heterojunction

Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H₂Pc heterojunction

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